 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES * * * SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high HIGH COLLECTOR CURRENT: IC MAX = 100 mA 0.65 2.0 0.2 1.3 2 UPA801TF OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TS06 (Top View) 2.1 0.1 1.25 0.1 1 6 0.22 - 0.05 (All Leads) 5 +0.10 DESCRIPTION The UPA801TF contains two NE856 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascade LNAs and other similar applications. 3 4 0.6 0.1 0.45 0.13 0.05 0 ~ 0.1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW C C RATINGS 20 12 3 100 110 200 150 -65 to +150 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. TJ TSTG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT Cre |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain1 at VCE = 3 V, IC = 7 mA GHz pF dB dB 0.85 7 Gain Bandwidth at VCE = 3 V, IC = 7 mA Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz hFE Ratio: hFE1 = Smaller Value of Q1 or Q2 hFE2 = Larger Value pf Q1 or Q2 UNITS A A 70 3.0 120 4.5 0.7 9 1.2 2.5 1.5 MIN UPA801TF TS06 TYP MAX 1.0 1.0 250 Notes: 1.Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA801TF-T1, 3K per reel. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS California Eastern Laboratories CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
Price & Availability of UPA801TF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |